Semiconductor device structure with multiple resistance variable layers

ABSTRACT

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a lower electrode over the semiconductor substrate. The semiconductor device structure also includes a first dielectric layer over the lower electrode, a second dielectric layer over the first dielectric layer, and a third dielectric layer over the second dielectric layer. Oxygen ions are bonded more tightly in the second dielectric layer than those in the first dielectric layer, and oxygen ions are bonded more tightly in the second dielectric layer than those in the third dielectric layer.

PRIORITY CLAIM AND CROSS-REFERENCE

This Application is a Divisional of U.S. application Ser. No.15/896,134, filed on Feb. 14, 2018 and issued as U.S. Pat. No.10,658,581, which claims the benefit of U.S. Provisional Application No.62/587,570, filed on Nov. 17, 2017, the entirety of which areincorporated by reference herein.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapidgrowth. Technological advances in IC materials and design have producedgenerations of ICs. Each generation has smaller and more complexcircuits than the previous generation.

In the course of IC evolution, functional density (i.e., the number ofinterconnected devices per chip area) has generally increased whilegeometric size (i.e., the smallest component (or line) that can becreated using a fabrication process) has decreased. This scaling-downprocess generally provides benefits by increasing production efficiencyand lowering associated costs.

However, these advances have increased the complexity of processing andmanufacturing ICs. Since feature sizes continue to decrease, fabricationprocesses continue to become more difficult to perform. Therefore, it isa challenge to form reliable semiconductor devices at smaller andsmaller sizes.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It shouldbe noted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1J are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments.

FIG. 2 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

FIG. 3 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

FIG. 4 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

FIG. 5 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

FIG. 6 is a cross-sectional view of a semiconductor device structure, inaccordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Some embodiments of the disclosure are described. Additional operationscan be provided before, during, and/or after the stages described inthese embodiments. Some of the stages that are described can be replacedor eliminated for different embodiments. Additional features can beadded to the semiconductor device structure. Some of the featuresdescribed below can be replaced or eliminated for different embodiments.Although some embodiments are discussed with operations performed in aparticular order, these operations may be performed in another logicalorder.

FIGS. 1A-1J are cross-sectional views of various stages of a process forforming a semiconductor device structure, in accordance with someembodiments. In some embodiments, the semiconductor device structure tobe formed includes a metal-insulator-metal (MIM) structure of aresistive random access memory (RRAM) structure. As shown in FIG. 1A, asemiconductor substrate 100 is received or provided. In someembodiments, the semiconductor substrate 100 is a bulk semiconductorsubstrate, such as a semiconductor wafer. For example, the semiconductorsubstrate 100 includes silicon or other elementary semiconductormaterials such as germanium. In some other embodiments, thesemiconductor substrate 100 includes a compound semiconductor. Thecompound semiconductor may include silicon carbide, gallium arsenide,indium arsenide, indium phosphide, another suitable compoundsemiconductor, or a combination thereof. In some embodiments, thesemiconductor substrate 100 includes a semiconductor-on-insulator (SOI)substrate. The SOI substrate may be fabricated using a separation byimplantation of oxygen (SIMOX) process, a wafer bonding process, anotherapplicable method, or a combination thereof.

In some embodiments, isolation features (not shown) are formed in thesemiconductor substrate 100 to define and isolate various deviceelements (not shown) formed in the semiconductor substrate 100. Theisolation features include, for example, trench isolation (STI) featuresor local oxidation of silicon (LOCOS) features.

In some embodiments, various device elements are formed in and/or on thesemiconductor substrate 100. Examples of the various device elementsthat may be formed in the semiconductor substrate 100 includetransistors (e.g., metal oxide semiconductor field effect transistors(MOSFET), complementary metal oxide semiconductor (CMOS) transistors,bipolar junction transistors (BJT), high-voltage transistors,high-frequency transistors, p-channel and/or n-channel field effecttransistors (PFETs/NFETs), etc.), diodes, another suitable element, or acombination thereof. Various processes are performed to form the variousdevice elements, such as deposition, etching, implantation,photolithography, annealing, planarization, one or more other applicableprocesses, or a combination thereof.

In some embodiments, a dielectric layer 102 is formed over thesemiconductor substrate 100, as shown in FIG. 1A. The dielectric layer102 may include multiple sub-layers. The dielectric layer 102 may bemade of or include carbon-containing silicon oxide, silicon oxide,borosilicate glass (BSG), phosphoric silicate glass (PSG),borophosphosilicate glass (BPSG), fluorinated silicate glass (FSG),porous dielectric material, another suitable low-k dielectric material,one or more other suitable materials, or a combination thereof.

In some embodiments, multiple conductive features are formed in thedielectric layer 102. The conductive features may include conductivecontacts, conductive lines, and/or conductive vias. The dielectric layer102 and the conductive features formed therein are a portion of aninterconnection structure that will be subsequently formed. Theformation of the dielectric layer 102 and the conductive features in thedielectric layer 102 may involve multiple deposition processes,patterning processes, and planarization processes. The device elementsin and/or on the semiconductor substrate 100 will be interconnectedthrough the interconnection structure to be formed over thesemiconductor substrate 100.

In some embodiments, a conductive feature 106 is formed in thedielectric layer 102, as shown in FIG. 1A. The conductive feature 106may be a conductive line. In some embodiments, a barrier layer 104 isformed between the conductive feature 106 and the dielectric layer 102.The barrier layer 104 may be used to prevent metal ions of theconductive features 106 from diffusing into the dielectric layer 102.

In some embodiments, trenches are formed in the dielectric layer 102.Each of the trenches may connect a via hole (not shown). The trenchesare used to contain conductive lines and the barrier layer. Theformation of the trenches may involve photolithography processes andetching processes. Afterwards, the barrier layer 104 is deposited overthe dielectric layer 102. The barrier layer 104 extends on sidewalls andbottom portions of the trenches. The barrier layer 104 may be made of orinclude tantalum nitride, titanium nitride, one or more other suitablematerials, or a combination thereof. The barrier layer 104 may bedeposited using a chemical vapor deposition (CVD) process, an atomiclayer deposition (ALD) process, a physical vapor deposition (PVD)process, an electroplating process, an electroless plating process, oneor more other applicable processes, or a combination thereof.

Afterwards, a conductive material layer is deposited over the barrierlayer 104 to fill the trenches, in accordance with some embodiments. Theconductive material layer may be made of or include copper, cobalt,tungsten, titanium, nickel, gold, platinum, graphene, one or more othersuitable materials, or a combination thereof. The conductive materiallayer may be deposited using a CVD process, an ALD process, a PVDprocess, an electroplating process, an electroless plating process, oneor more other applicable processes, or a combination thereof.

Afterwards, the barrier layer 104 and the conductive material layeroutside of the trenches are removed, in accordance with someembodiments. Remaining portions of the conductive material layer in oneof the trenches form the conductive feature 106. In some embodiments,the barrier layer 104 and the conductive material layer outside of thetrenches are removed using a planarization process. The planarizationprocess may include a CMP process, a dry polishing process, a mechanicalgrinding process, an etching process, one or more other applicableprocesses, or a combination thereof.

As shown in FIG. 1A, a dielectric layer 108 is deposited over thedielectric layer 102 and the conductive feature 106, in accordance withsome embodiments. The dielectric layer 108 may be made of or includesilicon carbide (SiC), nitrogen-doped silicon carbide, oxygen-dopedsilicon carbide, silicon nitride (SiN), silicon oxynitride (SiON),silicon oxide, one or more other suitable materials, or a combinationthereof. The dielectric layer 108 may be deposited using a CVD process,an ALD process, a PVD process, one or more other applicable processes,or a combination thereof. In some embodiments, the dielectric layer 108is patterned to form an opening 109 that exposes the conductive feature106, as shown in FIG. 1A.

As shown in FIG. 1B, a barrier layer 110 is deposited over thedielectric layer 108, in accordance with some embodiments. The barrierlayer 110 extends on the sidewalls and bottom portion of the opening109. The barrier layer 110 may be made of or include tantalum nitride,titanium nitride, one or more other suitable materials, or a combinationthereof. The barrier layer 110 may be deposited using a chemical vapordeposition (CVD) process, an atomic layer deposition (ALD) process, aphysical vapor deposition (PVD) process, an electroplating process, anelectroless plating process, one or more other applicable processes, ora combination thereof.

Afterwards, a conductive layer 112 is deposited over the barrier layer110, as shown in FIG. 1B in accordance with some embodiments. Theconductive layer 112 may fill the opening 109. The conductive layer 112is used as a lower electrode layer of a memory device that will beformed. The conductive layer 112 may be made of or include copper,cobalt, tungsten, titanium, nickel, gold, platinum, graphene, one ormore other suitable materials, or a combination thereof. The conductivelayer 112 may be deposited using a CVD process, an ALD process, a PVDprocess, an electroplating process, an electroless plating process, oneor more other applicable processes, or a combination thereof.

In some embodiments, the conductive layer 112 is planarized to providethe conductive layer 112 with a substantially planarized surface, whichmay facilitate subsequent formation processes. The conductive layer 112may be planarized using a chemical mechanical polishing (CMP) process, agrinding process, a dry polishing process, an etching process, one ormore other applicable processes, or a combination thereof.

In accordance with some embodiments, three or more resistance variablelayers are stacked together to serve as a data storage element. The datastorage element may have a small thickness to achieve a lower formingvoltage of an RRAM device. Due to the multiple resistance variablelayers, the leakage current may be significantly reduced, which leads toa better switching control. In some other cases in which only one thinsingle resistance variable layer is formed, the leakage current may behigh, which may negatively affect the device performance.

As shown in FIG. 1C, a stack of resistance variable layers is formedover the conductive layer 112, in accordance with some embodiments. Insome embodiments, the stack includes resistance variable layers 113,114, and 116. The resistance variable layers 113, 114, and 116 togetherserve as a data storage element which is configured to store data unit.Each of the resistance variable layers 113, 114, and 116 has variableresistance. Depending upon the voltage applied across the resistancevariable layers 113, 114, and 116, the total resistance of theresistance variable layers 113, 114, and 116 can be switched betweendifferent resistance states corresponding to different data states ofthe data unit.

Each of the resistance variable layers 113, 114, and 116 may havereduced resistance after a sufficiently high voltage is applied. Theapplied voltage may induce ions (such as oxygen ions) in the resistancevariable layers 113, 114, and 116 to move to the electrodes. As aresult, a series of vacancies are formed in the resistance variablelayers 113, 114, and 116. After the number of the vacancies is increasedto a sufficiently high amount, these vacancies may link together to formone or more conductive paths. For example, through a forming process,one or more conductive paths (for example, conductive filaments) may beformed in the resistance variable layers 113, 114, and 116 so that thetotal resistance of the resistance variable layers 113, 114, and 116 isreduced significantly.

A reverse voltage may be applied such that the oxygen ions go back tothe resistance variable layers 113, 114, and 116, which may partiallydestroy the formed conductive filaments or the conductive paths. As aresult, the total resistance of the resistance variable layers 113, 114,and 116 is increased.

As mentioned above, the total resistance of the resistance variablelayers 113, 114, and 116 may be adjusted through the application ofvoltage. The data may be stored in the resistance variable layers 113,114, and 116. By detecting the current passing through the resistancevariable layers 113, 114, and 116, information about the resistancestate of the resistance variable layers 113, 114, and 116 is obtained.Therefore, the stored data is also obtained correspondingly.

In some embodiments, each of the resistance variable layers 113, 114,and 116 is made of a dielectric material and is usually electricallyinsulating. Each of the resistance variable layers 113, 114, and 116 maybe made of or include an oxide material such as a metal oxide material.In some embodiments, each of the resistance variable layers 113, 114,and 116 is made of an oxygen-containing dielectric material.

In some embodiments, the middle resistance variable layer 114 hasdifferent characteristics than that of the resistance variable layers113 and 116. In some embodiments, the composition of the resistancevariable layer 114 is different than that of the resistance variablelayer 113 or 116. In some embodiments, the material of the resistancevariable layer 114 has better retention than that of the resistancevariable layer 113 or 116. In some embodiments, the material of theresistance variable layer 113 or 116 has lower leakage current than thatof the resistance variable layer 114. The combination of the resistancevariable layers 113, 114, and 116 may yield good retention and lowleakage current. In some embodiments, oxygen ions are bonded moretightly in the resistance variable layer 114 than those in theresistance variable layer 113 or 116.

In some embodiments, each of the resistance variable layers 113, 114,and 116 is an oxide layer containing elements respectively selected froma first group of elements and a second group of elements. In someembodiments, the first group of elements includes aluminum, silicon,tantalum, yttrium, and vanadium. In some embodiments, the second groupof elements includes zirconium, hafnium, titanium, lanthanum, andtantalum.

In some embodiments, the resistance variable layer 113 is an oxide layercontaining a first element and a second element other than the firstelement. In some embodiments, the first element is selected from one ofthe first group of elements, and the second element is selected from oneof the second group of elements. The bonding strength between oxygen andthe element selected from the first group of element may be greater thanthat between oxygen and the element selected from the second group ofelements. The bonding strength between the first element and oxygen maybe greater than a bonding strength between the second element andoxygen. In some embodiments, the resistance variable layer 113 has agreater atomic concentration of the second element than that of thefirst element. In some embodiments, a ratio of the atomic concentrationof the first element to a total atomic concentration of the firstelement and the second element is in a range from about 20% to about50%. In the resistance variable layer 113, the ratio of the atomicconcentration of the first element to the atomic concentration of thesecond element may be in a range from about 0.25 to about 1.

In some embodiments, the resistance variable layer 114 is an oxide layercontaining a third element and a fourth element other than the thirdelement. In some embodiments, the third element is selected from one ofthe first group of elements, and the fourth element is selected from oneof the second group of elements. The bonding strength between the thirdelement and oxygen may be greater than a bonding strength between thefourth element and oxygen.

In some embodiments, the first element of the resistance variable layer113 and the third element of the resistance variable layer 114 are thesame element selected from one of the first group of elements. In someother embodiments, the first element and the third element are differentelements selected from two of the first group of elements. In someembodiments, the second element of the resistance variable layer 113 andthe fourth element of the resistance variable layer 114 are the sameelement selected from one of the second group of elements. In some otherembodiments, the second element and the fourth element are differentelements selected from two of the second group of elements.

In some embodiments, the resistance variable layer 114 has a greateratomic concentration of the third element than that of the fourthelement. In some embodiments, a ratio of the atomic concentration of thethird element to a total atomic concentration of the third element andthe fourth element is in a range from about 55% to about 80%. In theresistance variable layer 114, the ratio of the atomic concentration ofthe third element to the atomic concentration of the fourth element maybe in a range from about 1.2 to about 4.

In some embodiments, the resistance variable layer 116 is an oxide layercontaining a fifth element and a sixth element other than the fifthelement. In some embodiments, the fifth element is selected from one ofthe first group of elements, and the sixth element is selected from oneof the second group of elements. The bonding strength between the fifthelement and oxygen may be greater than a bonding strength between thesixth element and oxygen.

In some embodiments, the fifth element of the resistance variable layer116 and the third element of the resistance variable layer 114 are thesame element selected from one of the first group of elements. In someother embodiments, the fifth element and the third element are differentelements selected from two of the first group of elements. In someembodiments, the sixth element of the resistance variable layer 116 andthe fourth element of the resistance variable layer 114 are the sameelement selected from one of the second group of elements. In some otherembodiments, the sixth element and the fourth element are differentelements selected from two of the second group of elements.

In some embodiments, the resistance variable layer 116 has a greateratomic concentration of the sixth element than that of the fifthelement. In some embodiments, a ratio of the atomic concentration of thefifth element to a total atomic concentration of the fifth element andthe sixth element is in a range from about 20% to about 50%. In theresistance variable layer 116, the ratio of the atomic concentration ofthe fifth element to the atomic concentration of the sixth element is ina range from about 0.25 to about 1.

In some embodiments, the atomic concentration of the third element ofthe resistance variable layer 114 is greater than the atomicconcentration of the first element of the resistance variable layer 113.In some embodiments, the atomic concentration of the third element ofthe resistance variable layer 114 is greater than the atomicconcentration of the fifth element of the resistance variable layer 116.As mentioned above, the bonding strength between oxygen and the elementselected from the first group of element may be greater than thatbetween oxygen and the element selected from the second group ofelements. Since the resistance variable layer 114 has a greater atomicconcentration of element selected from the first group of elements thanthat of the resistance variable layer 113 or 116, oxygen ions are bondedmore tightly in the resistance variable layer 114 than those in theresistance variable layer 113 or 116.

In some embodiments, the total thickness of the resistance variablelayers 113, 114, and 116 is in a range from about 60 nm to about 120 nm.In some embodiments, the resistance variable layers 113, 114, and 116have substantially the same thickness. However, many variations and/ormodifications can be made to embodiments of the disclosure. In someother embodiments, the resistance variable layers 113, 114, and 116 havedifferent thicknesses. In some embodiments, the resistance variablelayer 116 is thicker than the resistance variable layer 114 or 113. Insome embodiments, the ratio of the thickness of the resistance variablelayer 116 to the thickness of the resistance variable layer 114 is in arange from about 1.2 to about 2. In some cases, if the ratio is smallerthan about 1.2, the reliability of the semiconductor device structuremay not be sufficient. In some other cases, if the ratio is greater thanabout 2, the forming voltage of the semiconductor device structure maybe too high. The operation speed may also be not high enough.

Many methods may be used to form the resistance variable layers 113,114, and 116. In some embodiments, each of the resistance variablelayers 113, 114, and 116 is deposited using an ALD process, a CVDprocess, a PVD process, a spin-on process, a spraying coating process,one or more other applicable processes, or a combination thereof.

In some embodiments, the resistance variable layer 113 is in directcontact with the conductive layer 112 which serves as a lower electrodelayer. In some embodiments, due to the substantially planar surfaceprovided by the planarized conductive layer 112, adhesion between theresistance variable layer 113 and the conductive layer 112 is improved.

As shown in FIG. 1C, a capping layer 118 is afterwards deposited overthe resistance variable layer 116, in accordance with some embodiments.In some embodiments, the capping layer 118 is used as an ion reservoirregion. The capping layer 118 may induce the formation of vacancies inthe resistance variable layers 113, 114, and 116 during subsequentforming process and/or setting process. For example, the capping layer118 is used to receive oxygen ions from the resistance variable layers113, 114, and 116. As a result, vacancies forming the conductive pathsor conductive filaments are formed in the resistance variable layers113, 114, and 116. The forming and/or setting processes may therefore beachieved.

In some embodiments, the capping layer 118 is formed to have anappropriate thickness that is in a range from about 10 Å to about 150 Å.In some cases, if the thickness of the capping layer 118 is smaller thanabout 10 Å, the capping layer 118 may not be able to contain asufficient amount of oxygen ions from the resistance variable layers113, 114, and 116. As a result, the forming and/or setting processes maynot be easy to perform. In some other cases, if the thickness of thecapping layer 118 is greater than about 150 Å, the operation speed forthe reset process may be slowed down. In some embodiments, the ratio ofthe total thickness of the resistance variable layers 113, 114, and 116to the thickness of the capping layer 118 is in a range from about 0.02to about 0.2.

In some embodiments, the capping layer 118 is made of a metal material.In some embodiments, the capping layer 118 is made of or includestitanium (Ti), hafnium (Hf), zirconium (Zr), lanthanum (La), tantalum(Ta), nickel (Ni), tungsten (W), one or more other suitable metalmaterials, or a combination thereof. In some embodiments, the cappinglayer 118 is made of a pure metal material or a combination of puremetal materials. In some embodiments, the capping layer 118 includessubstantially no nitrogen or carbon. In some embodiments, the cappinglayer 118 is deposited using a PVD process, a CVD process, an ALDprocess, a plating process, one or more other applicable processes, or acombination thereof.

Afterwards, a conductive layer 120 is deposited over the capping layer118, as shown in FIG. 1C in accordance with some embodiments. Theconductive layer 120 is used as an upper electrode layer of a memorydevice that will be formed. The conductive layer 120 may be made of orinclude copper, cobalt, tungsten, titanium, nickel, gold, platinum,graphene, one or more other suitable materials, or a combinationthereof. The conductive layer 120 may be deposited using a CVD process,an ALD process, a PVD process, an electroplating process, an electrolessplating process, one or more other applicable processes, or acombination thereof.

As shown in FIG. 1D, a mask element 122 is formed over the conductivelayer 120, in accordance with some embodiments. The mask element 122 isused to assist in subsequent patterning process of the conductive layer120 and the capping layer 118. The mask element 122 may be made of orinclude silicon nitride, silicon oxynitride, silicon oxide, one or moreother suitable materials, or a combination thereof. A photolithographyprocess and an etching process may be used to form the mask element 122.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some other embodiments, the mask element 122 is notformed.

As shown in FIG. 1E, the conductive layer 120 and the capping layer 118are partially removed to be patterned, in accordance with someembodiments. After the patterning processes, the resistance variablelayers 113, 114, and 116 are exposed. In some embodiments, theconductive layer 120 and the capping layer 118 are partially removedusing one or more etching processes. In some embodiments, the resistancevariable layers 114, and 116 are also partially removed during thepatterning of the conductive layer 120 and the capping layer 118. Insome embodiments, the sidewalls of the resistance variable layer 116 and114 and the upper surface of the resistance variable layer 113 areexposed after the one or more etching processes.

As shown in FIG. 1F, a protective layer 124 is deposited over thestructure shown in FIG. 1E, in accordance with some embodiments. Theprotective layer 124 may be made of or include silicon nitride, siliconoxynitride, silicon oxide, one or more other suitable materials, or acombination thereof. In some embodiments, the protective layer 124 isdeposited using a CVD process, an ALD process, a spin-on process, a PVDprocess, one or more other applicable processes, or a combinationthereof.

As shown in FIG. 1G, the protective layer 124 is partially removed toform a protective element 126, in accordance with some embodiments. Theprotective element 126 covers sidewalls of the conductive layer 120, thecapping layer 118, and the resistance variable layers 116 and 114. Anetching process may be used to form the protective element 126. Duringthe etching process, the mask element 122 may also be etched. As aresult, a mask element 122′ with a smaller thickness may be formed. Insome other embodiments, the mask element 122 is completely removedduring the etching process for forming the protective element 126.

Many variations and/or modifications can be made to embodiments of thedisclosure. In some other embodiments, the protective layer 124 or theprotective element 126 is not formed.

As shown in FIG. 1H, the resistance variable layer 113, the conductivelayer 112, and the barrier layer 110 are partially removed to bepatterned, in accordance with some embodiments. In some embodiments, theresistance variable layer 113, the conductive layer 112, and the barrierlayer 110 are partially removed using one or more etching processes. Theprotective element 126 and the mask element 122′ may together functionas an etching mask during the patterning of the resistance variablelayer 113, the conductive layer 112, and the barrier layer 110.

As shown in FIG. 1I, a protective layer 128 is deposited over thestructure shown in FIG. 1H, in accordance with some embodiments. In someembodiments, the protective layer 128 contains silicon, oxygen, and/orcarbon. The protective layer 128 may be made of or include siliconoxide, silicon nitride, silicon carbide, silicon oxynitride, one or moreother suitable materials, or a combination thereof. In some embodiments,the protective layer 128 is made of a material that is substantiallyfree of oxygen. In some embodiments, the protective layer 128 is asingle layer. In some other embodiments, the protective layer 128includes multiple sub-layers. The sub-layers may be made of the samematerial. Alternatively, some of the sub-layers are made of differentmaterials. The protective layer 128 may be deposited using a CVDprocess, an ALD process, a PVD process, a spin-on process, one or moreother applicable processes, or a combination thereof.

Afterwards, a dielectric layer 130 is deposited over the protectivelayer 128, as shown in FIG. 1I in accordance with some embodiments. Thedielectric layer 130 may be made of or include carbon-containing siliconoxide, silicon oxide, borosilicate glass (BSG), phosphoric silicateglass (PSG), borophosphosilicate glass (BPSG), fluorinated silicateglass (FSG), porous dielectric material, another suitable low-kdielectric material, one or more other suitable materials, or acombination thereof. The dielectric layer 130 may be deposited using aCVD process, an ALD process, a PVD process, a spin-on process, a spraycoating process, one or more other applicable processes, or acombination thereof.

As shown in FIG. 1J, a conductive feature 134 is formed in thedielectric layer 130, in accordance with some embodiments. Theconductive feature 134 is electrically connected to the conductive layer120. In some embodiments, the conductive feature 134 is a conductivevia. In some embodiments, the conductive feature 134 is a conductiveline. In some embodiments, the conductive feature 134 is a combinationof a conductive via and a conductive line which is formed using a dualdamascene process.

In some embodiments, a barrier layer 132 is formed before the formationof the conductive feature 134. The material and formation method of thebarrier layer 132 may be the same as or similar to those of the barrierlayer 104. The material and formation method of the conductive feature134 may be the same as or similar to those of the conductive feature106.

As shown in FIG. 1J, a semiconductor device with a resistive randomaccess memory (RRAM) structure is formed, in accordance with someembodiments. The conductive layers 112 and 120 serve as a lowerelectrode and an upper electrode, respectively. The conductive layers112 and 120 sandwich the resistance variable layers 113, 114, and 116,and the capping layer 118. The RRAM structure employs oxygen vacanciesto manipulate the resistance of the resistance variable layers 113, 114,and 116. When a set voltage is applied across the conductive layers 112and 120, ions such as oxygen ions in the resistance variable layers 113,114, and 116 move through the resistance variable layer 116 to thecapping layer 118, thereby re-forming conductive paths (initially formedby a forming voltage) from oxygen vacancies and switching the variableresistance to the low resistance state. The set voltage is, for example,a positive voltage. When a reset voltage is applied across theconductive layers 120 and 112, the ions such as oxygen ions move back tothe resistance variable layers 113, 114, and 116 through the resistancevariable layer 116, thereby filling the oxygen vacancies and switchingthe variable resistance to the high resistance state. The reset voltageis, for example, a negative voltage.

Many variations and/or modifications can be made to embodiments of thedisclosure. FIG. 2 is a cross-sectional view of a semiconductor devicestructure, in accordance with some embodiments. In some embodiments, astructure the same as or similar to that shown in FIG. 1A is provided orreceived. In some embodiments, before the lower electrode layer (such asthe conductive layer 112) is formed, the dielectric layer 108 is formedover the semiconductor substrate 100. Afterwards, the opening 109 isformed in the dielectric layer 108. In some embodiments, the barrierlayer 110 and the conductive layer 112 are formed. Portions of thebarrier layer 110 and the conductive layer 112 extends into the opening109. In some embodiments, the conductive layer 112 is not planarized.Therefore, the conductive layer 112 includes a curved upper surface. Insome embodiments, the subsequently formed layers 113, 114, 116, 118, and120 also include curved upper surfaces accordingly, as shown in FIG. 2.

Many variations and/or modifications can be made to embodiments of thedisclosure. FIG. 3 is a cross-sectional view of a semiconductor devicestructure, in accordance with some embodiments. In some embodiments, anetching process similar to that shown in FIG. 1E is performed. However,the resistance variable layer 114 is substantially not etched. As shownin FIG. 3, the subsequently formed protective element 126 covers thesidewall of the resistance variable layer 116. The protective element126 does not cover the sidewall of the resistance variable layer 114 or113. In some embodiments, the bottom surface of the protective element126 is substantially coplanar with the top surface of the resistancevariable layer 114.

Many variations and/or modifications can be made to embodiments of thedisclosure. FIG. 4 is a cross-sectional view of a semiconductor devicestructure, in accordance with some embodiments. In some embodiments, theprotective element 126 covers a portion of the sidewall of theresistance variable layer 116. In some embodiments, the bottom surfaceof the protective element 126 is higher than the bottom surface of theresistance variable layer 116 and lower than the top surface of theresistance variable layer 116.

Many variations and/or modifications can be made to embodiments of thedisclosure. FIG. 5 is a cross-sectional view of a semiconductor devicestructure, in accordance with some embodiments. In some embodiments, theprotective element 126 covers a portion of the sidewall of theresistance variable layer 114. In some embodiments, the protectiveelement 126 covers the sidewall of the resistance variable layer 116. Insome embodiments, the bottom surface of the protective element 126 ishigher than the bottom surface of the resistance variable layer 114 andlower than the top surface of the resistance variable layer 114.

Many variations and/or modifications can be made to embodiments of thedisclosure. FIG. 6 is a cross-sectional view of a semiconductor devicestructure, in accordance with some embodiments. In some embodiments, theprotective element 126 covers a portion of the sidewall of theresistance variable layer 113. In some embodiments, the protectiveelement 126 covers the sidewalls of the resistance variable layers 114and 116. In some embodiments, the bottom surface of the protectiveelement 126 is higher than the bottom surface of the resistance variablelayer 113 and lower than the top surface of the resistance variablelayer 113.

Embodiments of the disclosure form a semiconductor device including aresistive random access memory (RRAM) structure. The RRAM structureincludes three or more resistance variable layers which are sandwichedbetween a lower electrode and an upper electrode. The three or moreresistance variable layers may have different compositions whichcorrespond to different characteristics. For example, oxygen ions in themiddle resistance variable layer may be bonded more tightly than thosein the lower or upper resistance variable layer. Due to the multipleresistance variable layers, the leakage current may be significantlyreduced, which leads to a better switching control. Therefore, thequality and reliability of the semiconductor device structure aresignificantly improved.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a semiconductorsubstrate and a lower electrode over the semiconductor substrate. Thesemiconductor device structure also includes a first oxide layer overthe lower electrode. The first oxide layer contains a first element anda second element other than the first element. The first element isselected from one of a first group of elements comprising aluminum,silicon, tantalum, yttrium, and vanadium. The second element is selectedfrom one of a second group of elements comprising zirconium, hafnium,titanium, lanthanum, and tantalum. The semiconductor device structurefurther includes a second oxide layer over the first oxide layer. Thesecond oxide layer contains a third element and a fourth element otherthan the third element. The third element is selected from one of thefirst group of elements, and the fourth element is selected from one ofthe second group of elements. In addition, the semiconductor devicestructure includes a third oxide layer over the second oxide layer. Thethird oxide layer contains a fifth element and a sixth element otherthan the fifth element. The fifth element is selected from one of thefirst group of elements, and the sixth element is selected from one ofthe second group of elements. An atomic concentration of the thirdelement of the second oxide layer is greater than an atomicconcentration of the first element of the first oxide layer or an atomicconcentration of the fifth element of the third oxide layer. Thesemiconductor device structure also includes an upper electrode over thethird oxide layer.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a semiconductorsubstrate and a lower electrode over the semiconductor substrate. Thesemiconductor device structure also includes a first resistance variablelayer over the lower electrode, a second resistance variable layer overthe first resistance variable layer, and a third resistance variablelayer over the second resistance variable layer. Each of the firstresistance variable layer, the second resistance variable layer, and thethird resistance variable layer is an oxide material containing a firstelement and a second element. A bonding strength between the firstelement and oxygen is greater than a bonding strength between the secondelement and oxygen. The second resistance variable layer has a greateratomic concentration of the first element than that of the firstresistance variable layer or that of the second resistance variablelayer. The semiconductor device structure further includes an upperelectrode over the third resistance variable layer.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a semiconductorsubstrate and a lower electrode over the semiconductor substrate. Thesemiconductor device structure also includes a first oxide layer overthe lower electrode, a second oxide layer over the first oxide layer,and a third oxide layer over the second oxide layer. Oxygen ions arebonded more tightly in the second oxide layer than those in the firstoxide layer or in the third oxide layer. The semiconductor devicestructure further includes an upper electrode over the third oxidelayer.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a semiconductorsubstrate and a lower electrode over the semiconductor substrate. Thesemiconductor device structure also includes a first oxide layer overthe lower electrode. The first oxide layer contains a first element anda second element other than the first element. The first element isselected from one of a first group of elements comprising aluminum,silicon, tantalum, yttrium, and vanadium. The second element is selectedfrom one of a second group of elements comprising zirconium, hafnium,titanium, lanthanum, and tantalum. The semiconductor device structurefurther includes a second oxide layer over the first oxide layer. Thesecond oxide layer contains a third element and a fourth element otherthan the third element, the third element is selected from one of thefirst group of elements, and the fourth element is selected from one ofthe second group of elements. In addition, the semiconductor devicestructure includes a third oxide layer over the second oxide layer. Thethird oxide layer contains a fifth element and a sixth element otherthan the fifth element, the fifth element is selected from one of thefirst group of elements, the sixth element is selected from one of thesecond group of elements. An atomic concentration of the third elementof the second oxide layer is greater than an atomic concentration of thefirst element of the first oxide layer, and the atomic concentration ofthe third element of the second oxide layer is greater than an atomicconcentration of the fifth element of the third oxide layer. Thesemiconductor device structure also includes an upper electrode over thethird oxide layer.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a semiconductorsubstrate and a lower electrode over the semiconductor substrate. Thesemiconductor device structure also includes a storage element over thelower electrode. The storage element includes a first resistancevariable region over the lower electrode, a second resistance variableregion over the first resistance variable region, and a third resistancevariable region over the second resistance variable region. Each of thefirst resistance variable region, the second resistance variable region,and the third resistance variable region is made of an oxide materialcontaining a first element and a second element. A bonding strengthbetween the first element and oxygen is greater than a bonding strengthbetween the second element and oxygen. The second resistance variableregion has a greater atomic concentration of the first element than thatof the first resistance variable region, and the second resistancevariable region has a greater atomic concentration of the first elementthan that of the third resistance variable layer. The semiconductordevice structure further includes an upper electrode over the storageelement.

In accordance with some embodiments, a semiconductor device structure isprovided. The semiconductor device structure includes a semiconductorsubstrate and a lower electrode over the semiconductor substrate. Thesemiconductor device structure also includes a first oxide layer overthe lower electrode, a second oxide layer over the first oxide layer,and a third oxide layer over the second oxide layer. Oxygen ions arebonded more tightly in the second oxide layer than those in the firstoxide layer, and oxygen ions are bonded more tightly in the second oxidelayer than those in the third oxide layer. The semiconductor devicestructure further includes an upper electrode over the third oxidelayer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor device structure, comprising: asemiconductor substrate; a lower electrode over the semiconductorsubstrate; a first dielectric layer over the lower electrode, whereinthe first dielectric layer contains a first element and a second elementother than the first element, the first element comprises aluminum,silicon, tantalum, yttrium, or vanadium, and the second elementcomprises zirconium, hafnium, titanium, lanthanum, or tantalum; a seconddielectric layer over the first dielectric layer, wherein the seconddielectric layer contains a third element and a fourth element otherthan the third element, the third element comprises aluminum, silicon,tantalum, yttrium, or vanadium, and the fourth element compriseszirconium, hafnium, titanium, lanthanum, or tantalum; a third dielectriclayer over the second dielectric layer, wherein the third dielectriclayer contains a fifth element and a sixth element other than the fifthelement, the fifth element comprises aluminum, silicon, tantalum,yttrium, or vanadium, and the sixth element comprises zirconium,hafnium, titanium, lanthanum, or tantalum, an atomic concentration ofthe third element of the second dielectric layer is greater than anatomic concentration of the first element of the first dielectric layer,and the atomic concentration of the third element of the seconddielectric layer is greater than an atomic concentration of the fifthelement of the third dielectric layer; and an upper electrode over thethird dielectric layer.
 2. The semiconductor device structure as claimedin claim 1, wherein the third dielectric layer is thicker than thesecond dielectric layer, and the third dielectric layer is thicker thanthe first dielectric layer.
 3. The semiconductor device structure asclaimed in claim 1, wherein the second dielectric layer is in directcontact with the first dielectric layer and the third dielectric layer.4. The semiconductor device structure as claimed in claim 1, wherein thefirst element, the third element, and the fifth element are the same. 5.The semiconductor device structure as claimed in claim 1, wherein atleast two of the first element, the third element, and the fifth elementare different elements.
 6. The semiconductor device structure as claimedin claim 1, wherein a ratio of the atomic concentration of the thirdelement of the second dielectric layer to an atomic concentration of thefourth element of the second dielectric layer is in a range from about1.2 to about
 4. 7. The semiconductor device structure as claimed inclaim 1, wherein: a ratio of the atomic concentration of the firstelement of the first dielectric layer to an atomic concentration of thesecond element of the first dielectric layer is in a range from about0.25 to about 1, and a ratio of the atomic concentration of the fifthelement of the third dielectric layer to an atomic concentration of thesixth element of the third dielectric layer is in a range from about0.25 to about
 1. 8. The semiconductor device structure as claimed inclaim 1, wherein at least one of the first dielectric layer, the seconddielectric layer, and the third dielectric layer has a curved uppersurface.
 9. The semiconductor device structure as claimed in claim 1,further comprising a metal capping layer between the third dielectriclayer and the upper electrode, wherein the metal capping layer is indirect contact with the third dielectric layer.
 10. The semiconductordevice structure as claimed in claim 1, wherein a topmost point of thefirst dielectric layer is higher than a bottommost point of the seconddielectric layer.
 11. The semiconductor device structure as claimed inclaim 1, wherein a topmost point of the third dielectric layer is higherthan a bottommost point of the upper electrode.
 12. A semiconductordevice structure, comprising: a semiconductor substrate; a lowerelectrode over the semiconductor substrate; a storage element over thelower electrode, wherein the storage element comprises: a firstresistance variable region over the lower electrode; a second resistancevariable region over the first resistance variable region; a thirdresistance variable region over the second resistance variable region,wherein: the first resistance variable region is made of a first oxidematerial containing a first element and a second element, the secondresistance variable region is made of a second oxide material containinga third element and a fourth element, the third resistance variableregion is made of a third oxide material containing a fifth element anda sixth element, a bonding strength between the first element and oxygenis greater than a bonding strength between the second element andoxygen, a bonding strength between the third element and oxygen isgreater than a bonding strength between the fourth element and oxygen, abonding strength between the fifth element and oxygen is greater than abonding strength between the sixth element and oxygen, the secondresistance variable region has a greater atomic concentration of thethird element than an atomic concentration of the first element of thefirst resistance variable region, the second resistance variable regionhas a greater atomic concentration of the third element than an atomicconcentration of the fifth element of the third resistance variableregion; and an upper electrode over the storage element.
 13. Thesemiconductor device structure as claimed in claim 12, wherein: thefirst element, the third element, and the fifth element comprisealuminum, silicon, tantalum, yttrium, or vanadium, and the secondelement, the fourth element, and the sixth element comprise zirconium,hafnium, titanium, lanthanum, or tantalum.
 14. The semiconductor devicestructure as claimed in claim 12, wherein at least one of the firstresistance variable region, the second resistance variable region, andthe third resistance variable region has a curved upper surface.
 15. Thesemiconductor device structure as claimed in claim 12, wherein a topmostpoint of the first resistance variable region is higher than abottommost point of the second resistance variable region.
 16. Thesemiconductor device structure as claimed in claim 12, wherein thesecond resistance variable region is in direct contact with the firstresistance variable region and the third resistance variable region. 17.The semiconductor device structure as claimed in claim 12, furthercomprising a metal capping layer between the third resistance variableregion and the upper electrode, wherein the metal capping layer is indirect contact with the third resistance variable region.
 18. Asemiconductor device structure, comprising: a semiconductor substrate; alower electrode over the semiconductor substrate; a first dielectriclayer over the lower electrode; a second dielectric layer over the firstdielectric layer; and a third dielectric layer over the seconddielectric layer, wherein oxygen ions are bonded more tightly in thesecond dielectric layer than those in the first dielectric layer, andoxygen ions are bonded more tightly in the second dielectric layer thanthose in the third dielectric layer, wherein: the first dielectric layercontains a first element and a second element, the first element and thesecond element are different from each other, the first element isselected from one of a first group of elements comprising aluminum,silicon, tantalum, yttrium, and vanadium, the second element is selectedfrom one of a second group of elements comprising zirconium, hafnium,titanium, lanthanum, and tantalum, the second dielectric layer containsa third element and a fourth element, the third element and the fourthelement are different from each other, the third element is selectedfrom one of the first group of elements, the fourth element selectedfrom one of the second group of elements, the third dielectric layercontains a fifth element and a sixth element, the fifth element and thesixth element are different from each other, the fifth element isselected from one of the first group of elements, the sixth elementselected from one of the second group of elements, and an atomicconcentration of the third element of the second dielectric layer isgreater than an atomic concentration of the first element of the firstdielectric layer.
 19. The semiconductor device structure as claimed inclaim 18, wherein the atomic concentration of the third element of thesecond dielectric layer is greater than an atomic concentration of thefifth element of the third dielectric layer.
 20. The semiconductordevice structure as claimed in claim 18, further comprising: aprotective element covering a side surface of the third dielectriclayer, wherein a bottom surface of the protective element is between atop surface of the semiconductor substrate and a top surface of one ofthe first dielectric layer, the second dielectric layer, and the thirddielectric layer; and an upper electrode over the third dielectriclayer, wherein the bottom surface of the protective element is between abottom surface of the first dielectric layer and a bottom surface of theupper electrode.